Abstract

The important components of reliability projection are investigated. Acceleration parameters are obtained for a 1.6 nm oxide with a soft breakdown criterion. Based on the physical percolation model, the voltage scaling factor for time to breakdown is found to increase with lower voltage, explaining the experimental observation of 6.7 ± 0.4 dec V-1 for the 1.6 nm oxide. The distribution of breakdown times is shown to be sensitive to thickness variation across the test wafer, and a Weibull slope of 1.38 ± 0.1 was obtained. The temperature dependence of the time to breakdown was found to be non-Arrhenius and to have a slope of 0.02 dec °C-1. Using these parameters, the 1.6 nm oxide was found to have a 10 year lifetime with a 100 ppm failure rate for 1.3 V operation at 100 °C. Our understanding of soft breakdown is described as well as an investigation of device operation after soft breakdown, which may further improve the reliability projection.

Keywords

Weibull distributionBreakdown voltageArrhenius equationReliability (semiconductor)OxideMaterials scienceTime-dependent gate oxide breakdownScalingPercolation (cognitive psychology)Electrical breakdownWaferProjection (relational algebra)Gate oxideAnalytical Chemistry (journal)Stress (linguistics)VoltageChemistryElectrical engineeringThermodynamicsOptoelectronicsPhysicsMathematicsGeometryStatisticsDielectricEngineeringPhysical chemistryActivation energy

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Publication Info

Year
2000
Type
article
Volume
15
Issue
5
Pages
455-461
Citations
80
Access
Closed

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B. E. Weir, Md Ashraful Alam, J. Bude et al. (2000). Gate oxide reliability projection to the sub-2 nm regime. Semiconductor Science and Technology , 15 (5) , 455-461. https://doi.org/10.1088/0268-1242/15/5/304

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DOI
10.1088/0268-1242/15/5/304