Abstract
A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min(-1)), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10(5), a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm(2) V(-1) s(-1). The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.
Keywords
Materials scienceNanowireFabricationTransfer printingSubstrate (aquarium)OptoelectronicsPolydimethylsiloxaneTransistorField-effect transistorNanotechnologySubthreshold slopeVoltageElectrical engineeringComposite material
MeSH Terms
CrystallizationEquipment DesignEquipment Failure AnalysisMacromolecular SubstancesMaterials TestingMolecular ConformationNanostructuresNanotechnologyParticle SizePrintingSurface PropertiesTransistorsElectronicZinc Oxide
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Publication Info
- Year
- 2009
- Type
- article
- Volume
- 20
- Issue
- 19
- Pages
- 195302-195302
- Citations
- 62
- Access
- Closed
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Cite This
Yi-Kuei Chang,
Franklin Chau-Nan Hong
(2009).
The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing.
Nanotechnology
, 20
(19)
, 195302-195302.
https://doi.org/10.1088/0957-4484/20/19/195302
Identifiers
- DOI
- 10.1088/0957-4484/20/19/195302
- PMID
- 19420638