Fabrication of Single‐ and Multilayer MoS2 Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature

Hai Li; Zongyou Yin; Qiyuan He; Hong Li; Xiao Huang; Gang Lü; Derrick Wen Hui Fam; Alfred Iing Yoong Tok; Qing Zhang; Hua Zhang

doi:10.1002/smll.201101016

Abstract

Single- and multilayer MoS(2) films are deposited onto Si/SiO(2) using the mechanical exfoliation technique. The films were then used for the fabrication of field-effect transistors (FETs). These FET devices can be used as gas sensors to detect nitrous oxide (NO). Although the single-layer MoS(2) device shows a rapid response after exposure to NO, the current was found to be unstable. The two-, three-, and four-layer MoS(2) devices show both stable and sensitive responses to NO down to a concentration of 0.8 ppm.

Keywords

FabricationMaterials scienceField-effect transistorOptoelectronicsTransistorNanotechnologyField (mathematics)Engineering physicsElectrical engineeringVoltagePhysicsEngineering

Affiliated Institutions

Nanyang Technological University SG

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Publication Info

Year: 2011
Type: article
Volume: 8
Issue: 1
Pages: 63-67
Citations: 1503
Access: Closed

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APA Style

                            
                                
                                    Hai Li, 
                                
                                    Zongyou Yin, 
                                
                                    Qiyuan He
                                
                                et al.
                            
                            (2011). 
                            Fabrication of Single‐ and Multilayer MoS<sub>2</sub> Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature. 
                            Small
                            , 8
                            (1)
                            , 63-67.
                            https://doi.org/10.1002/smll.201101016
                        

Identifiers

DOI: 10.1002/smll.201101016

Fabrication of Single‐ and Multilayer MoS<sub>2</sub> Film‐Based Field‐Effect Transistors for Sensing NO at Room Temperature