Abstract
The fact that single-layer graphene can be visualized on 300 nm SiO(2)/Si substrate using an optical microscope has enabled the facile fabrication of single-layer graphene devices for fundamental studies and potential applications. Here we report on an Al(2)O(3)/Si substrate for the fabrication of graphene devices with better contrast and higher performance. Our studies show that the contrast of single-layer graphene on 72 nm Al(2)O(3)/Si substrate is much better than that of single-layer graphene on 300 nm SiO(2)/Si substrate. Moreover, the transconductance of single-layer graphene transistors on Al(2)O(3)/Si substrate shows a more than sevenfold increase, due to the smaller dielectric thickness and higher dielectric constant in a 72 nm Al(2)O(3) film. These studies demonstrate a new and superior substrate for the fabrication of graphene transistors, and are of significance for both fundamental studies and technological applications.
Keywords
GrapheneMaterials scienceSubstrate (aquarium)FabricationOptoelectronicsLayer (electronics)TransconductanceDielectricNanotechnologyTransistorGraphene nanoribbonsElectrical engineering
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Publication Info
- Year
- 2009
- Type
- article
- Volume
- 21
- Issue
- 1
- Pages
- 015705-015705
- Citations
- 102
- Access
- Closed
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Cite This
Lei Liao,
Jingwei Bai,
Yongquan Qu
et al.
(2009).
Single-layer graphene on Al<sub>2</sub>O<sub>3</sub>/Si substrate: better contrast and higher performance of graphene transistors.
Nanotechnology
, 21
(1)
, 015705-015705.
https://doi.org/10.1088/0957-4484/21/1/015705
Identifiers
- DOI
- 10.1088/0957-4484/21/1/015705