Abstract

We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magnetotransport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight-binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to midinfrared energies by using fields of less, approximately < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.

Keywords

Bilayer grapheneCondensed matter physicsElectric fieldSemiconductorGrapheneEffective mass (spring–mass system)Band gapMaterials scienceQuantum Hall effectPhysicsElectronOptoelectronicsNanotechnologyQuantum mechanics

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Publication Info

Year
2007
Type
article
Volume
99
Issue
21
Pages
216802-216802
Citations
1960
Access
Closed

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Cite This

Eduardo V. Castro, Kostya S. Novoselov, С. В. Морозов et al. (2007). Biased Bilayer Graphene: Semiconductor with a Gap Tunable by the Electric Field Effect. Physical Review Letters , 99 (21) , 216802-216802. https://doi.org/10.1103/physrevlett.99.216802

Identifiers

DOI
10.1103/physrevlett.99.216802
PMID
18233240
arXiv
cond-mat/0611342

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Data completeness: 84%