Abstract

We have studied the quantized Hall effect of the two-dimensional electron gas in GaAs- ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ heterojunctions at low temperatures to 50 mK. We observe in the small-current and low-temperature limit sharp steps connecting the quantized Hall resistance plateaus. The diagonal resistivity ${\ensuremath{\rho}}_{\mathrm{xx}}$ decreases with decreasing $T$ at the Shubnikov---de Haas peaks, as well as at the dips, and is vanishingly small at magnetic fields above 40 kG.

Keywords

Condensed matter physicsHall effectPhysicsHeterojunctionQuantum Hall effectElectrical resistivity and conductivityFermi gasMagnetic fieldThermal Hall effectElectronShubnikov–de Haas effectDiagonalLimit (mathematics)Quantum mechanicsQuantum oscillations

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Publication Info

Year
1982
Type
article
Volume
25
Issue
8
Pages
5566-5569
Citations
166
Access
Closed

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M. A. Paalanen, D. C. Tsui, A. C. Gossard (1982). Quantized Hall effect at low temperatures. Physical review. B, Condensed matter , 25 (8) , 5566-5569. https://doi.org/10.1103/physrevb.25.5566

Identifiers

DOI
10.1103/physrevb.25.5566