Gate oxide reliability projection to the sub-2 nm regime
The important components of reliability projection are investigated. Acceleration parameters are obtained for a 1.6 nm oxide with a soft breakdown criterion. Based on the physic...
Publications
2 shownMinimization of Interfacial Microroughness for 13–60 Å Ultrathin Gate Oxides
ABSTRACT By using a combination of smooth epi substrates (0.7 Å rms roughness), in-situ UV/Cl 2 processing, and rapid thermal oxidation, highly reliable ultrathin gate oxides we...
Frequent Co-Authors
Researcher Info
- h-index
- 2
- Publications
- 2
- Citations
- 88
- Institution
- Alcatel Lucent (Germany)
External Links
Impact Metrics
h-index
2
h-index: Number of publications with at least h citations each.