Properties of high κ gate dielectrics Gd2O3 and Y2O3 for Si
We present the materials growth and properties of both epitaxial and amorphous films of Gd2O3 (κ=14) and Y2O3 (κ=18) as the alternative gate dielectrics for Si. The rare earth o...
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2 shownMinimization of Interfacial Microroughness for 13–60 Å Ultrathin Gate Oxides
ABSTRACT By using a combination of smooth epi substrates (0.7 Å rms roughness), in-situ UV/Cl 2 processing, and rapid thermal oxidation, highly reliable ultrathin gate oxides we...
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