Minimization of Interfacial Microroughness for 13–60 Å Ultrathin Gate Oxides

J. Sapjeta; T. Boone; J. M. Rosamilia; P. J. Silvėrman; T. Sorsch; G. Timp; B. E. Weir

doi:10.1557/proc-477-203

Abstract

ABSTRACT By using a combination of smooth epi substrates (0.7 Å rms roughness), in-situ UV/Cl 2 processing, and rapid thermal oxidation, highly reliable ultrathin gate oxides were produced with ≤ 1.0 Å rms interface roughness.

Keywords

Materials scienceSurface finishSurface roughnessThermalOptoelectronicsComposite materialMeteorology

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Publication Info

Year: 1997
Type: article
Volume: 477
Citations: 8
Access: Closed

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APA Style

                            
                                    J. Sapjeta, 
                                
                                    T. Boone, 
                                
                                    J. M. Rosamilia
                                
                                et al.
                            
                            (1997). 
                            Minimization of Interfacial Microroughness for 13–60 Å Ultrathin Gate Oxides. 
                            MRS Proceedings
                            , 477
                            
                            .
                            https://doi.org/10.1557/proc-477-203

Identifiers

DOI: 10.1557/proc-477-203

Data Quality

Data completeness: 77%