Dielectric Screening Enhanced Performance in Graphene FET

Fang Chen; Jilin Xia; D. K. Ferry; Nongjian Tao

doi:10.1021/nl900725u

Abstract

We have studied the transport properties of graphene transistors in different solvents with dielectric constant varying over 2 orders of magnitude. Upon increasing the dielectric constant, the carrier mobility increases up to 3 orders of magnitude and reaches approximately 7 x 10(4) cm(2)/v.s at the dielectric constant of approximately 47. This mobility value changes little in higher dielectric constant solvents, which indicates that we are approaching the intrinsic limit of room temperature mobility in graphene supported on SiO(2) substrates. The results are discussed in terms of long-range Coulomb scattering originated from the charged impurities underneath graphene.

Keywords

GrapheneDielectricMaterials scienceNanotechnologyOptoelectronics

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Publication Info

Year: 2009
Type: article
Volume: 9
Issue: 7
Pages: 2571-2574
Citations: 276
Access: Closed

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APA Style

                            
                                
                                    Fang Chen, 
                                
                                    Jilin Xia, 
                                
                                    D. K. Ferry
                                
                                et al.
                            
                            (2009). 
                            Dielectric Screening Enhanced Performance in Graphene FET. 
                            Nano Letters
                            , 9
                            (7)
                            , 2571-2574.
                            https://doi.org/10.1021/nl900725u
                        

Identifiers

DOI: 10.1021/nl900725u