Abstract

At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single-and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although σ min is often approximately 2–3 e 2 / h (where e is the electron charge and h is Planck’s constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T c of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.

Keywords

Bilayer grapheneCondensed matter physicsGrapheneElectronCharge (physics)PhysicsDopingPhase transitionElementary chargeCharge-carrier densityBilayerCharge carrierCharge densityChemistryQuantum mechanics

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Publication Info

Year
2012
Type
article
Volume
109
Issue
27
Pages
10802-10805
Citations
125
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Cite This

Wenzhong Bao, Jairo Velasco, Fan Zhang et al. (2012). Evidence for a spontaneous gapped state in ultraclean bilayer graphene. Proceedings of the National Academy of Sciences , 109 (27) , 10802-10805. https://doi.org/10.1073/pnas.1205978109

Identifiers

DOI
10.1073/pnas.1205978109