Institute of Microelectronics Technology and High Purity Materials

Electric Field Effect in Atomically Thin Carbon Films

We describe monocrystalline graphitic films, which are a few atoms thick but are nonetheless stable under ambient conditions, metallic, and of remarkably high quality. The films...

Two-dimensional gas of massless Dirac fermions in graphene

Two-dimensional atomic crystals

We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By u...

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit...

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

Tunnel Barriers for Graphene Transistors Transistor operation for integrated circuits not only requires that the gate material has high-charge carrier mobility, but that there i...

Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit\npronounced negative bend resistance and an anomalous Hall effect, which are a\ndirect consequence of ...

Superconductivity in Ropes of Single-Walled Carbon Nanotubes

We report measurements on ropes of single-walled carbon nanotubes (SWNT) in low-resistance contact to nonsuperconducting (normal) metallic pads, at low voltage and at temperatur...

How Close Can One Approach the Dirac Point in Graphene Experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experime...