Abstract

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit\npronounced negative bend resistance and an anomalous Hall effect, which are a\ndirect consequence of room-temperature ballistic transport on a micrometer\nscale for a wide range of carrier concentrations. The encapsulation makes\ngraphene practically insusceptible to the ambient atmosphere and,\nsimultaneously, allows the use of boron nitride as an ultrathin top gate\ndielectric.\n

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Year
2011
Type
article
Volume
11
Issue
6
Pages
2396-2399
Citations
1574
Access
Closed

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Alexander S. Mayorov, Roman V. Gorbachev, Sergey V. Morozov et al. (2011). Micrometer-Scale Ballistic Transport in Encapsulated Graphene at Room Temperature. Nano Letters , 11 (6) , 2396-2399. https://doi.org/10.1021/nl200758b

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DOI
10.1021/nl200758b