Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics

Keywords

GrapheneQuantum tunnellingHeterojunctionMaterials scienceTransistorOptoelectronicsNanotechnologyThermionic emissionSemiconductorField-effect transistorElectronicsChemical vapor depositionOxideElectrical engineeringPhysicsElectronVoltage

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Publication Info

Year: 2012
Type: article
Volume: 8
Issue: 2
Pages: 100-103
Citations: 1711
Access: Closed

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APA Style

                            
                                
                                    Thanasis Georgiou, 
                                
                                    R. Jalil, 
                                
                                    Branson D. Belle
                                
                                et al.
                            
                            (2012). 
                            Vertical field-effect transistor based on graphene–WS2 heterostructures for flexible and transparent electronics. 
                            Nature Nanotechnology
                            , 8
                            (2)
                            , 100-103.
                            https://doi.org/10.1038/nnano.2012.224
                        

Identifiers

DOI: 10.1038/nnano.2012.224