Abstract
The formation of voids on the thermally grown (650 °C) ultrathin (∼1 nm) silicon oxide films on the Si(100) surface was investigated by using ultrahigh vacuum scanning tunneling microscopy. Voids form randomly on the ultrathin oxide film upon thermal annealing at 750 °C. In contrast to void formation observed on thicker (>5 nm) thermal silicon oxide films and that observed on ultrathin (∼1 nm) oxide films formed by room temperature O2 adsorption, the number of voids increases during annealing. We find that Si monomer creation and SiO production compete kinetically in the void formation process.
Keywords
Void (composites)Materials scienceAnnealing (glass)SiliconOxideScanning tunneling microscopeSilicon oxideChemical engineeringAdsorptionThermalNanotechnologyComposite materialOptoelectronicsMetallurgyChemistryPhysical chemistry
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Publication Info
- Year
- 1996
- Type
- article
- Volume
- 69
- Issue
- 9
- Pages
- 1270-1272
- Citations
- 80
- Access
- Closed
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Cite This
Yi Wei,
Robert M. Wallace,
Alan Seabaugh
(1996).
Void formation on ultrathin thermal silicon oxide films on the Si(100) surface.
Applied Physics Letters
, 69
(9)
, 1270-1272.
https://doi.org/10.1063/1.117388
Identifiers
- DOI
- 10.1063/1.117388