Abstract
Multiple internal infrared reflection spectroscopy has been used to identify the chemical nature of chemically oxidized and subsequently HF stripped silicon surfaces. These very inert surfaces are found to be almost completely covered by atomic hydrogen. Results using polarized radiation on both flat and stepped Si(111) and Si(100) surfaces reveal the presence of many chemisorption sites (hydrides) that indicate that the surfaces are microscopically rough, although locally ordered. In particular, the HF‐prepared Si(100) surface appears to have little in common with the smooth H‐saturated Si(100) surface prepared in ultrahigh vacuum.
Keywords
HydrogenInfrared spectroscopyChemisorptionSiliconSpectroscopyInfraredMaterials scienceMorphology (biology)InertReflection (computer programming)Surface (topology)Analytical Chemistry (journal)ChemistryPhysical chemistryOpticsOptoelectronicsAdsorptionPhysicsOrganic chemistry
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Publication Info
- Year
- 1989
- Type
- article
- Volume
- 7
- Issue
- 3
- Pages
- 2104-2109
- Citations
- 660
- Access
- Closed
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Cite This
Yves J. Chabal,
G. S. Higashi,
K. Raghavachari
et al.
(1989).
Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphology.
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
, 7
(3)
, 2104-2109.
https://doi.org/10.1116/1.575980
Identifiers
- DOI
- 10.1116/1.575980