Abstract

Essentially atomically smooth (100) and (110) n-TiO(2) (rutile) surfaces were prepared by immersion of commercially available single-crystal wafers in 20% HF, followed by annealing at 600 degrees C in air. The obtained surfaces were stable in aqueous solutions of pH 1-13, showing no change in the surface morphology on an atomic level, contrary to atomically flat surfaces prepared by ion sputtering and annealing under UHV. The success in preparation of the atomically smooth and stable n-TiO(2) surfaces enabled us to reveal clear crystal-face dependences of the surface band edges and hole reactivity in aqueous solutions.

Keywords

RutileAnnealing (glass)Materials scienceCrystal (programming language)WaferAqueous solutionSputteringCrystallographyIonNanotechnologyChemical engineeringThin filmChemistryComposite materialPhysical chemistry

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Publication Info

Year
2005
Type
letter
Volume
109
Issue
5
Pages
1648-1651
Citations
114
Access
Closed

Citation Metrics

114
OpenAlex
0
Influential
108
CrossRef

Cite This

Ryuhei Nakamura, Naomichi Ohashi, Akihito Imanishi et al. (2005). Crystal-Face Dependences of Surface Band Edges and Hole Reactivity, Revealed by Preparation of Essentially Atomically Smooth and Stable (110) and (100) n-TiO<sub>2</sub> (Rutile) Surfaces. The Journal of Physical Chemistry B , 109 (5) , 1648-1651. https://doi.org/10.1021/jp044710t

Identifiers

DOI
10.1021/jp044710t
PMID
16851137

Data Quality

Data completeness: 77%