Abstract
Measurements of the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field-effect transistor, show that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device. Preliminary data are reported.
Keywords
Hall effectMaterials scienceSemiconductorSiliconVoltageConstant (computer programming)TransistorMetalCondensed matter physicsField-effect transistorOptoelectronicsOxideQuantum Hall effectThermal Hall effectElectronMagnetic fieldPhysicsComputer scienceQuantum mechanics
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Publication Info
- Year
- 1980
- Type
- article
- Volume
- 45
- Issue
- 6
- Pages
- 494-497
- Citations
- 6760
- Access
- Closed
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Cite This
K. von Klitzing,
G. Dorda,
M. Pepper
(1980).
New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance.
Physical Review Letters
, 45
(6)
, 494-497.
https://doi.org/10.1103/physrevlett.45.494
Identifiers
- DOI
- 10.1103/physrevlett.45.494