Abstract
Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C 6 H 5 C 2 H 4 NH 3 ) 2 SnI 4 form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10 4 . Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.
Keywords
Materials scienceThin filmOrganic semiconductorField-effect transistorPerovskite (structure)Hybrid materialThin-film transistorElectron mobilityOptoelectronicsTransistorSemiconductorNanotechnologyChemistryElectrical engineeringCrystallographyLayer (electronics)Voltage
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Publication Info
- Year
- 1999
- Type
- article
- Volume
- 286
- Issue
- 5441
- Pages
- 945-947
- Citations
- 2049
- Access
- Closed
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Cite This
Cherie R. Kagan,
David B. Mitzi,
Christos Dimitrakopoulos
(1999).
Organic-Inorganic Hybrid Materials as Semiconducting Channels in Thin-Film Field-Effect Transistors.
Science
, 286
(5441)
, 945-947.
https://doi.org/10.1126/science.286.5441.945
Identifiers
- DOI
- 10.1126/science.286.5441.945