Abstract
The quantum confinement of electrons and holes in low‐dimensional semiconductor structures strongly influences the properties of “quantum wires and dots” and therefore has an important impact on the performance of high‐speed electron and optoelectronic devices. The fabrication of such structures using, for example, molecular beam epitaxy and metal–organic vapor phase epitaxy, their characterization, and their use in heterojunctions, quantum wells, and high electron mobility transistors are reviewed.
Keywords
Materials scienceQuantum dotMolecular beam epitaxyHeterojunctionSemiconductorOptoelectronicsQuantum wireFabricationCharacterization (materials science)ElectronQuantum wellTransistorEpitaxyQuantum point contactNanotechnologyPhysicsOptics
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Publication Info
- Year
- 1993
- Type
- article
- Volume
- 5
- Issue
- 1
- Pages
- 22-29
- Citations
- 63
- Access
- Closed
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Cite This
R. Nötzel,
K. H. Ploog
(1993).
Direct synthesis of semiconductor quantum‐wire and quantum‐dot structures.
Advanced Materials
, 5
(1)
, 22-29.
https://doi.org/10.1002/adma.19930050104
Identifiers
- DOI
- 10.1002/adma.19930050104