Abstract

Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.

Keywords

GrapheneMaterials scienceSilicon carbideEpitaxyNanolithographySiliconOptoelectronicsNanotechnologyGraphiteMicrometerCarbon nanotubeCoherence lengthMolecular beam epitaxyGraphene nanoribbonsQuantum dotLayer (electronics)Condensed matter physicsFabricationOpticsPhysicsComposite material

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Publication Info

Year
2006
Type
article
Volume
312
Issue
5777
Pages
1191-1196
Citations
5451
Access
Closed

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Cite This

Claire Berger, Zhimin Song, Xuebin Li et al. (2006). Electronic Confinement and Coherence in Patterned Epitaxial Graphene. Science , 312 (5777) , 1191-1196. https://doi.org/10.1126/science.1125925

Identifiers

DOI
10.1126/science.1125925