Keywords
Lasing thresholdMaterials scienceOptoelectronicsUltravioletBand gapExcitonLaserCathodoluminescenceDirect and indirect band gapsExcitationLuminescenceHexagonal boron nitrideWide-bandgap semiconductorOpticsNanotechnologyCondensed matter physics
Affiliated Institutions
Related Publications
Room-Temperature Ultraviolet Nanowire Nanolasers
Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire subs...
Band parameters for III–V compound semiconductors and their alloys
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, ...
A review of Ga2O3 materials, processing, and devices
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyon...
Growth of Uniformly Aligned ZnO Nanowire Heterojunction Arrays on GaN, AlN, and Al<sub>0.5</sub>Ga<sub>0.5</sub>N Substrates
Vertically aligned single-crystal ZnO nanorods have been successfully fabricated on semiconducting GaN, Al0.5Ga0.5N, and AlN substrates through a vapor-liquid-solid process. Nea...
Amorphous transparent conductive oxide InGaO<sub>3</sub>(ZnO)<sub>m</sub> (m≤ 4): a Zn4s conductor
Abstract With the purpose of creating ZnO-based amorphous transparent conductors, a range of amorphous films InGaoO3(ZnO)m (where m ≤ 4) was prepared using a pulsed-laser deposi...
Publication Info
- Year
- 2004
- Type
- article
- Volume
- 3
- Issue
- 6
- Pages
- 404-409
- Citations
- 2916
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
2916
OpenAlex
Cite This
Kenji Watanabe,
Takashi Taniguchi,
H. Kanda
(2004).
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal.
Nature Materials
, 3
(6)
, 404-409.
https://doi.org/10.1038/nmat1134
Identifiers
- DOI
- 10.1038/nmat1134