Band parameters for III–V compound semiconductors and their alloys
We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, ...
Publications
4 shownMULTIBAND FINITE ELEMENT MODELING OF WAVEFUNCTION-ENGINEERED ELECTRO-OPTICAL DEVICES
Recent advances in the modeling of semiconductor heterostructures with complex geometries allow one to go beyond band-structure engineering to the more general concept of wavefu...
Effect of nonparabolicity in GaAs/<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As semiconductor quantum wells
We investigate the effect of nonparabolicity in various bands of bulk semiconductors on the electronic-subband-edge energies in quantum wells. We compare the results from differ...
Diagonal representation for the transfer-matrix method for obtaining electronic energy levels in layered semiconductor heterostructures
We develop a multiband k\ensuremath{\cdot}P transfer-matrix algorithm by defining a ``diagonal representation'' that provides a unified way of calculating energy levels and wave...
Frequent Co-Authors
Researcher Info
- h-index
- 4
- Publications
- 4
- Citations
- 7,211
- Institution
- Worcester Polytechnic Institute
External Links
Identifiers
- ORCID
- 0000-0001-8013-6888
Impact Metrics
h-index
4
h-index: Number of publications with at least h citations each.