Abstract

Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, <0001> oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

Keywords

NanowireLasing thresholdMaterials scienceOptoelectronicsUltravioletSapphireLaserNanolaserLaser linewidthSemiconductorNanometreWhispering-gallery wavePhotonicsNanotechnologyOpticsWavelengthResonatorPhysics

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Publication Info

Year
2001
Type
article
Volume
292
Issue
5523
Pages
1897-1899
Citations
8863
Access
Closed

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Cite This

Michael H. Huang, Samuel S. Mao, H. Feick et al. (2001). Room-Temperature Ultraviolet Nanowire Nanolasers. Science , 292 (5523) , 1897-1899. https://doi.org/10.1126/science.1060367

Identifiers

DOI
10.1126/science.1060367
PMID
11397941

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Data completeness: 77%