Abstract

Abstract Semiconductor nanowires of III–V materials have generated much interest in recent years. However, the growth mechanisms by which these structures form are not well understood. The so‐called vapor–liquid–solid (VLS) mechanism has often been proposed for III–V systems, with a chemically inert, liquid metal particle (typically Au) acting as a physical catalyst. We assert here that Au is, in fact, not inert with respect to the semiconductor material but rather interacts with it to form a variety of intermetallic compounds. Moreover, we suggest that III–V nanowire growth can best be understood if the metallic particle is not a liquid, but a solid‐phase solution or compound containing Au and the group III material. The four materials GaP, GaAs, InP, and InAs will be considered, and growth behavior related to their particular temperature‐dependent interaction with Au.

Keywords

Materials scienceNanowireIntermetallicInertSemiconductorVapor–liquid–solid methodNanotechnologyParticle (ecology)MetalPhase (matter)Liquid phaseChemical engineeringChemical physicsOptoelectronicsMetallurgyOrganic chemistryChemistryThermodynamics

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Publication Info

Year
2005
Type
article
Volume
15
Issue
10
Pages
1603-1610
Citations
139
Access
Closed

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Kimberly A. Dick, Knut Deppert, Lisa Karlsson et al. (2005). A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires. Advanced Functional Materials , 15 (10) , 1603-1610. https://doi.org/10.1002/adfm.200500157

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DOI
10.1002/adfm.200500157