R. A. Abram - Researcher Profile | RDL Research Database

Publications

1 shown

Localized states in inverted silicon-silicon dioxide interfaces

R. A. Abram

It is suggested that electrons in the inversion layer at an Si-SiO2 interface can behave like electrons in a two-dimensional disordered system. The conduction band will then hav...

1973 Journal of Physics C Solid State Physics 20 citations

Researcher Info

h-index: 1
Publications: 1
Citations: 20
Institution: Oclaro (United Kingdom)

External Links

ORCID Profile Google Scholar

Identifiers

ORCID: 0000-0002-0738-1454

Impact Metrics

h-index 1

h-index: Number of publications with at least h citations each.