Abstract
It is suggested that electrons in the inversion layer at an Si-SiO2 interface can behave like electrons in a two-dimensional disordered system. The conduction band will then have a tail of localized states and an associated mobility edge. It is shown that the wavefunctions of localized states near the edge (at energy Ec) will have a spatial extent which behaves as mod E-Ec mod -34/.
Keywords
ElectronSiliconConduction bandEnhanced Data Rates for GSM EvolutionCondensed matter physicsWave functionThermal conductionAtomic physicsInversion (geology)Materials sciencePhysicsOptoelectronicsQuantum mechanicsTelecommunicationsGeology
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Publication Info
- Year
- 1973
- Type
- article
- Volume
- 6
- Issue
- 20
- Pages
- L379-L381
- Citations
- 20
- Access
- Closed
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Cite This
R. A. Abram
(1973).
Localized states in inverted silicon-silicon dioxide interfaces.
Journal of Physics C Solid State Physics
, 6
(20)
, L379-L381.
https://doi.org/10.1088/0022-3719/6/20/001
Identifiers
- DOI
- 10.1088/0022-3719/6/20/001