Valence-band structure of wurtzite GaN including the spin-orbit interaction

Guanzhou Ren; Y. M. Liu; P. Blood

doi:10.1063/1.123461

Abstract

We have investigated the effects of the spin-orbit interaction on the valence-band structure of wurtzite GaN in the k⋅p theory. The spin-orbit interaction is usually neglected in nitrides, which leads to three doubly degenerate bands: the heavy-hole, light-hole, and crystal-field split-off bands. Including the spin-orbit interaction, this degeneracy is removed to give six single bands. We obtained the Luttinger-like parameters in bulk wurtzite GaN by fitting data obtained from an empirical pseudopotential calculation obtaining a value for the parameter A7 of 93.7 meV/Å. We also used these results to calculate the valence-band structures of a GaN/AlGaN quantum well. Our result shows the spin-orbit interaction is important in GaN and associated quantum well structures.

Keywords

Wurtzite crystal structurePseudopotentialCondensed matter physicsSpin–orbit interactionDegenerate energy levelsValence (chemistry)Wide-bandgap semiconductorElectronic band structureMaterials scienceEnergy level splittingPhysicsQuantum mechanicsZinc

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Publication Info

Year: 1999
Type: article
Volume: 74
Issue: 8
Pages: 1117-1119
Citations: 65
Access: Closed

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APA Style

                            
                                    Guanzhou Ren, 
                                
                                    Y. M. Liu, 
                                
                                    P. Blood
                                
                            (1999). 
                            Valence-band structure of wurtzite GaN including the spin-orbit interaction. 
                            Applied Physics Letters
                            , 74
                            (8)
                            , 1117-1119.
                            https://doi.org/10.1063/1.123461

Identifiers

DOI: 10.1063/1.123461