Abstract

First-principles calculations of structure optimization, phonon modes, and finite temperature molecular dynamics predict that silicon and germanium can have stable, two-dimensional, low-buckled, honeycomb structures. Similar to graphene, these puckered structures are ambipolar and their charge carriers can behave like a massless Dirac fermion due to their pi and pi(*) bands which are crossed linearly at the Fermi level. In addition to these fundamental properties, bare and hydrogen passivated nanoribbons of Si and Ge show remarkable electronic and magnetic properties, which are size and orientation dependent. These properties offer interesting alternatives for the engineering of diverse nanodevices.

Keywords

Ambipolar diffusionGermaniumGrapheneCondensed matter physicsHoneycomb structureHoneycombSiliconMaterials scienceMassless particlePhononFermi levelSilicenePhysicsNanotechnologyQuantum mechanicsElectronOptoelectronics

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Publication Info

Year
2009
Type
article
Volume
102
Issue
23
Pages
236804-236804
Citations
3257
Access
Closed

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Cite This

Seymur Cahangirov, Mehmet Topsakal, Ethem Aktürk et al. (2009). Two- and One-Dimensional Honeycomb Structures of Silicon and Germanium. Physical Review Letters , 102 (23) , 236804-236804. https://doi.org/10.1103/physrevlett.102.236804

Identifiers

DOI
10.1103/physrevlett.102.236804
PMID
19658958
arXiv
0811.4412

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Data completeness: 84%