The Topotactic Transformation of Ti3SiC2 into a Partially Ordered Cubic Ti  (  C 0.67Si0.06 )  Phase by the Diffusion of Si into Molten Cryolite

Michel W. Barsoum; T. El‐Raghy; L. Farber; Mäher S. Amer; R. A. Christini; Angelique Adams

doi:10.1149/1.1392573

Abstract

Immersion of samples in molten cryolite at 960°C resulted in the preferential diffusion of Si atoms out of the basal planes to form a partially ordered, cubic phase with approximate chemistry Ti . The latter forms in domains, wherein the (111) planes are related by mirror planes; i.e.,the loss of Si results in the de‐twinning of the layers. Raman spectroscopy, X‐ray diffraction, optical, scanning and transmission electron microscopy all indicate that the Si exits the structure topotactically, in such a way that the C atoms remain partially in their ordered position in the cubic phase.

Keywords

CryoliteCrystal twinningTransmission electron microscopyCrystallographyRaman spectroscopyPhase (matter)DiffusionDiffractionMaterials scienceChemistryScanning electron microscopeAluminiumMicrostructureMetallurgyNanotechnologyThermodynamicsComposite material

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Publication Info

Year: 1999
Type: article
Volume: 146
Issue: 10
Pages: 3919-3923
Citations: 168
Access: Closed

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APA Style

                            
                                
                                    Michel W. Barsoum, 
                                
                                    T. El‐Raghy, 
                                
                                    L. Farber
                                
                                et al.
                            
                            (1999). 
                            The Topotactic Transformation of Ti3SiC2 into a Partially Ordered Cubic Ti  (  C 0.67Si0.06 )  Phase by the Diffusion of Si into Molten Cryolite. 
                            Journal of The Electrochemical Society
                            , 146
                            (10)
                            , 3919-3923.
                            https://doi.org/10.1149/1.1392573
                        

Identifiers

DOI: 10.1149/1.1392573