Temperature-Dependent Transport in Suspended Graphene

Kirill I. Bolotin; Kenneth Sikes; James Hone; H. L. Störmer; Philip Kim

doi:10.1103/physrevlett.101.096802

Abstract

The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5<T<240 K. At T-5 K transport is near-ballistic in a device of approximately 2 microm dimension and a mobility approximately 170,000 cm2/V s. At large carrier density, n>0.5 x 10(11) cm(-2), the resistivity increases with increasing T and is linear above 50 K, suggesting carrier scattering from acoustic phonons. At T=240 K the mobility is approximately 120,000 cm2/V s, higher than in any known semiconductor. At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing T, consistent with a density inhomogeneity <10(8) cm(-2).

Keywords

GrapheneCondensed matter physicsElectrical resistivity and conductivityCharge-carrier densityCharge carrierScatteringMaterials sciencePhononElectron mobilityBallistic conductionCarrier scatteringConductivitySemiconductorCharge (physics)PhysicsNanotechnologyOpticsOptoelectronicsElectronDopingQuantum mechanics

Affiliated Institutions

Columbia University US

Related Publications

Measurement of Scattering Rate and Minimum Conductivity in Graphene

Yan‐Wen Tan , Y. Zhang , Kirill I. Bolotin +6 more

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of 1-20x10(3) cm2/V sec. Comparing the exp...

2007 Physical Review Letters 1016 citations

High-Mobility Few-Layer Graphene Field Effect Transistors Fabricated on Epitaxial Ferroelectric Gate Oxides

Xia Hong , Agham Posadas , Ke Zou +2 more

The carrier mobility mu of few-layer graphene (FLG) field-effect transistors increases tenfold when the SiO2 substrate is replaced by single-crystal epitaxial Pb(Zr0.2Ti0.8)O3 (...

2009 Physical Review Letters 217 citations

Evidence for a spontaneous gapped state in ultraclean bilayer graphene

Wenzhong Bao , Jairo Velasco , Fan Zhang +6 more

At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneo...

2012 Proceedings of the National Academy o... 125 citations

Carrier Transport in Two-Dimensional Graphene Layers

E. H. Hwang , Shaffique Adam , S. Das Sarma

Carrier transport in gated 2D graphene monolayers is considered in the presence of scattering by random charged impurity centers with density n(i). Excellent quantitative agreem...

2007 Physical Review Letters 1228 citations

Phonon-limited mobility in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type single-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles

Kristen Kaasbjerg , Kristian S. Thygesen , Karsten W. Jacobsen

In the present work we calculate the phonon-limited mobility in intrinsic\nn-type single-layer MoS2 as a function of carrier density and temperature for T\n> 100 K. Using a f...

2012 Physical Review B 1219 citations

Publication Info

Year: 2008
Type: article
Volume: 101
Issue: 9
Pages: 096802-096802
Citations: 1175
Access: Closed

External Links

Download PDF (Free) View on DOI.org arXiv PubMed Semantic Scholar

Social Impact

Altmetric

Temperature-Dependent Transport in Suspended Graphene

PlumX Metrics

Social media, news, blog, policy document mentions

Citation Metrics

1175

OpenAlex

Influential

1050

CrossRef

Cite This

APA Style

                            
                                
                                    Kirill I. Bolotin, 
                                
                                    Kenneth Sikes, 
                                
                                    James Hone
                                
                                et al.
                            
                            (2008). 
                            Temperature-Dependent Transport in Suspended Graphene. 
                            Physical Review Letters
                            , 101
                            (9)
                            , 096802-096802.
                            https://doi.org/10.1103/physrevlett.101.096802
                        

Identifiers

DOI: 10.1103/physrevlett.101.096802
PMID: 18851636
arXiv: 0805.1830

Data Quality

Data completeness: 84%