Abstract

A method for enhancing the emission properties of light-emitting diodes, by coupling to surface plasmons, is analyzed both theoretically and experimentally. The analyzed structure consists of a semiconductor emitter layer thinner than λ/2 sandwiched between two metal films. If a periodic pattern is defined in the top semitransparent metal layer by lithography, it is possible to efficiently couple out the light emitted from the semiconductor and to simultaneously enhance the spontaneous emission rate. For the analyzed designs, we theoretically estimate extraction efficiencies as high as 37% and Purcell factors of up to 4.5. We have experimentally measured photoluminescence intensities of up to 46 times higher in fabricated structures compared to unprocessed wafers. The increased light emission is due to an increase in the efficiency and an increase in the pumping intensity resulting from trapping of pump photons within the microcavity.

Keywords

Materials scienceOptoelectronicsSurface plasmonLight-emitting diodePhotoluminescencePurcell effectDiodeWaferSpontaneous emissionPlasmonSemiconductorOpticsCommon emitterLithographyElectroluminescenceLayer (electronics)LaserPhysicsNanotechnology

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Publication Info

Year
2000
Type
article
Volume
36
Issue
10
Pages
1131-1144
Citations
263
Access
Closed

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Jelena Vučković, Marko Lončar, Axel Scherer (2000). Surface plasmon enhanced light-emitting diode. IEEE Journal of Quantum Electronics , 36 (10) , 1131-1144. https://doi.org/10.1109/3.880653

Identifiers

DOI
10.1109/3.880653