Abstract
Indirect evidence is presented that free-standing Si quantum wires can be fabricated without the use of epitaxial deposition or lithography. The novel approach uses electrochemical and chemical dissolution steps to define networks of isolated wires out of bulk wafers. Mesoporous Si layers of high porosity exhibit visible (red) photoluminescence at room temperature, observable with the naked eye under <1 mW unfocused (<0.1 W cm−2) green or blue laser line excitation. This is attributed to dramatic two-dimensional quantum size effects which can produce emission far above the band gap of bulk crystalline Si.
Keywords
PhotoluminescenceMaterials scienceDissolutionWaferLithographyFabricationOptoelectronicsPorous siliconNanotechnologyNanolithographySiliconChemical-mechanical planarizationMesoporous materialEpitaxySemiconductorChemical engineeringChemistry
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Publication Info
- Year
- 1990
- Type
- article
- Volume
- 57
- Issue
- 10
- Pages
- 1046-1048
- Citations
- 7914
- Access
- Closed
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Cite This
Leigh Canham
(1990).
Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers.
Applied Physics Letters
, 57
(10)
, 1046-1048.
https://doi.org/10.1063/1.103561
Identifiers
- DOI
- 10.1063/1.103561