Abstract
Instabilities in semiconductor heterostructure growth can be exploited for the self-organized formation of nanostructures, allowing for carrier confinement in all three spatial dimensions. Beside the description of various growth modes, the experimental characterization of structural properties, such as size and shape, chemical composition, and strain distribution is presented. The authors discuss the calculation of strain fields, which play an important role in the formation of such nanostructures and also influence their structural and optoelectronic properties. Several specific materials systems are surveyed together with important applications.
Keywords
Semiconductor nanostructuresNanostructureHeterojunctionPhysicsSemiconductorCharacterization (materials science)NanotechnologyChemical physicsCondensed matter physicsOptoelectronicsMaterials scienceOpticsQuantum mechanics
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Publication Info
- Year
- 2004
- Type
- article
- Volume
- 76
- Issue
- 3
- Pages
- 725-783
- Citations
- 790
- Access
- Closed
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Cite This
J. Stangl,
V. Holý,
G. Bauer
(2004).
Structural properties of self-organized semiconductor nanostructures.
Reviews of Modern Physics
, 76
(3)
, 725-783.
https://doi.org/10.1103/revmodphys.76.725
Identifiers
- DOI
- 10.1103/revmodphys.76.725