Abstract

A new phototransistor based on the mechanically exfoliated single-layer MoS(2) nanosheet is fabricated, and its light-induced electric properties are investigated in detail. Photocurrent generated from the phototransistor is solely determined by the illuminated optical power at a constant drain or gate voltage. The switching behavior of photocurrent generation and annihilation can be completely finished within ca. 50 ms, and it shows good stability. Especially, the single-layer MoS(2) phototransistor exhibits a better photoresponsivity as compared with the graphene-based device. The unique characteristics of incident-light control, prompt photoswitching, and good photoresponsivity from the MoS(2) phototransistor pave an avenue to develop the single-layer semiconducting materials for multifunctional optoelectronic device applications in the future.

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Publication Info

Year
2011
Type
article
Volume
6
Issue
1
Pages
74-80
Citations
3411
Access
Closed

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Zongyou Yin, Hai Li, Hong Li et al. (2011). Single-Layer MoS<sub>2</sub>Phototransistors. ACS Nano , 6 (1) , 74-80. https://doi.org/10.1021/nn2024557

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DOI
10.1021/nn2024557