Abstract
Radiation produced by the recombination of excess electrons and holes in silicon has been examined both at room temperature and at 77\ifmmode^\circ\else\textdegree\fi{}K. The radiation obtained at room temperature is shown to be an intrinsic property of silicon. It is probably due to indirect transitions of electrons from the conduction band minima to the valence band with phonon cooperation. Additional radiation is found at 77\ifmmode^\circ\else\textdegree\fi{}K which is structure-sensitive. This radiation is shown to be produced by the recombination of excess carriers with unionized donor and acceptor impurities. Differences between the photon energies associated with the maximum photon emission of intrinsic and extrinsic radiation are in semiquantitative accord with accepted values of ionization energies of the donor and acceptor impurities introduced in the crystal-growing process.
Keywords
ElectronAtomic physicsSiliconRadiationRecombinationImpurityIonizationPhotonAcceptorThermal conductionMaterials sciencePhononPhysicsCondensed matter physicsIonOptoelectronicsOpticsNuclear physicsChemistry
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Publication Info
- Year
- 1956
- Type
- article
- Volume
- 101
- Issue
- 6
- Pages
- 1676-1678
- Citations
- 105
- Access
- Closed
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Cite This
J. R. Haynes,
W. C. Westphal
(1956).
Radiation Resulting from Recombination of Holes and Electrons in Silicon.
Physical Review
, 101
(6)
, 1676-1678.
https://doi.org/10.1103/physrev.101.1676
Identifiers
- DOI
- 10.1103/physrev.101.1676