Abstract
The electrical conductivity of black phosphorus has been measured as a function of temperature and pressure up to 350\ifmmode^\circ\else\textdegree\fi{}C and 8000 kg/${\mathrm{cm}}^{2}$. The Hall constant of the same material has been measured as a function of temperature at atmospheric pressure. At low temperatures $p$-type impurity conduction is observed; at high temperatures the phosphorus is an intrinsic semiconductor with a gap width of 0.33 ev. The mobilities at 27\ifmmode^\circ\else\textdegree\fi{}C are 350 ${\mathrm{cm}}^{2}$/volt sec and 220 ${\mathrm{cm}}^{2}$/volt sec for the holes and electrons, respectively. Application of hydrostatic pressure decreases the gap at a rate $\frac{\mathrm{VdW}}{\mathrm{dV}}=8.3$ ev. The results are also interpreted in terms of a two-dimensional semiconductor model.
Keywords
Hydrostatic pressureBlack phosphorusSemiconductorElectronPhysicsCondensed matter physicsImpurityHall effectElectrical resistivity and conductivityThermal conductionHydrostatic equilibriumAtmospheric pressureMaterials sciencePhosphorusAtomic physicsThermodynamicsNuclear physicsQuantum mechanicsOptoelectronics
Affiliated Institutions
Related Publications
Frequency Dependence of the Electron Conductivity in the Silicon Inversion Layer in the Metallic and Localized Regimes
The conductivity of electrons in the inversion layer of silicon has been measured from 0 to 40 ${\mathrm{cm}}^{\ensuremath{-}1}$ at 1.2\ifmmode^\circ\else\textdegree\fi{}K in th...
Heteroepitaxial graphite on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mo>−</mml:mo><mml:mi mathvariant="normal">SiC</mml:mi><mml:mn/><mml:mo>(</mml:mo><mml:mn>0001</mml:mn><mml:mo>)</mml:mo><mml:mo>:</mml:mo></mml:math> Interface formation through conduction-band electronic structure
When annealed at elevated temperatures under vacuum, silicon carbide surfaces show a tendency towards graphitization. Using the sensitivity of empty conduction-band states dispe...
Size Dependence of the Thermal Conductivity of Helium I Near the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>λ</mml:mi></mml:math>Point
The thermal conductivity of helium I was measured along its vapor pressure curve over the range $3\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}6}\ifmmode^\circ\else\tex...
The Thermal Expansion of Pure Metals: Copper, Gold, Aluminum, Nickel, and Iron
Extremely accurate determinations of the linear thermal expansions have been made interferometrically from --- 196\ifmmode^\circ\else\textdegree\fi{}C to temperatures about +400...
Thermal Conductivity of He I Near the Superfluid Transition
The thermal conductivity of HeI was measured at saturated vapor pressure from ${10}^{\ensuremath{-}7}$ \ifmmode^\circ\else\textdegree\fi{}K to 5 \ifmmode\times\else\texttimes\fi...
Publication Info
- Year
- 1953
- Type
- article
- Volume
- 92
- Issue
- 3
- Pages
- 580-584
- Citations
- 553
- Access
- Closed
External Links
Social Impact
Altmetric
PlumX Metrics
Social media, news, blog, policy document mentions
Citation Metrics
553
OpenAlex
Cite This
Robert W. Keyes
(1953).
The Electrical Properties of Black Phosphorus.
Physical Review
, 92
(3)
, 580-584.
https://doi.org/10.1103/physrev.92.580
Identifiers
- DOI
- 10.1103/physrev.92.580