Influence of quantum confinement on the electronic structure of the transition metal sulfide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>T</mml:mi></mml:mrow></mml:math>S<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>

2011 Physical Review B 1,681 citations

Abstract

Bulk MoS2, a prototypical layered transition-metal dichalcogenide, is an\nindirect band gap semiconductor. Reducing its size to a monolayer, MoS2\nundergoes a transition to the direct band semiconductor. We support this\nexperimental observation by first principles calculations and show that quantum\nconfinement in layered d-electron dichalcogenides results in tuning the\nelectronic structure at the nanoscale. We further studied the properties of\nrelated TmS2 nanolayers (Tm = W, Nb, Re) and show that the isotopological WS2\nexhibits similar electronic properties, while NbS2 and ReS2 remain metallic\nindependent on size.\n

Keywords

Quantum dotTransition metalSemiconductorMaterials scienceElectronic structureMonolayerSlabMetalBand gapCondensed matter physicsSulfideElectronic band structureNanotechnologyPhysicsOptoelectronicsChemistryMetallurgy

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Publication Info

Year
2011
Type
article
Volume
83
Issue
24
Citations
1681
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Agnieszka Kuc, Nourdine Zibouche, Thomas Heine (2011). Influence of quantum confinement on the electronic structure of the transition metal sulfide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>T</mml:mi></mml:mrow></mml:math>S<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>. Physical Review B , 83 (24) . https://doi.org/10.1103/physrevb.83.245213

Identifiers

DOI
10.1103/physrevb.83.245213