Abstract
The macroscopic polarizability of silicon is calculated from first principles as a function of the lattice distortion induced by a zone-center optical phonon. The electronic response to the electric field is dealt with by dielectric matrices, and the lattice distortion is treated by frozen-phonon techniques. Our results compare quite well with the most recent measurements of the one-phonon Raman cross section.
Keywords
PolarizabilityPhononRaman spectroscopyMaterials scienceSiliconAb initioDielectricDistortion (music)Condensed matter physicsLattice (music)Electric fieldCross section (physics)Molecular physicsAtomic physicsPhysicsOpticsQuantum mechanicsMoleculeOptoelectronics
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Publication Info
- Year
- 1986
- Type
- article
- Volume
- 33
- Issue
- 8
- Pages
- 5969-5971
- Citations
- 69
- Access
- Closed
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Cite This
Stefano Baroni,
Raffaele Resta
(1986).
<i>Ab initio</i>calculation of the low-frequency Raman cross section in silicon.
Physical review. B, Condensed matter
, 33
(8)
, 5969-5971.
https://doi.org/10.1103/physrevb.33.5969
Identifiers
- DOI
- 10.1103/physrevb.33.5969