GaAs p-n junction formed in quantum wire crystals

Abstract

A p-n junction is formed for the first time in a cross-sectional area of a GaAs wire crystal with a diameter of about 100 nm. Ultrafine cylindrical growth by metalorganic vapor phase epitaxy is employed for the fabrication. Current-voltage and capacitance-voltage characteristics confirm the formation of the p-n junction in a narrow area at the midpoint of a wire crystal. Intensive light emission by current injection is observed at 77 K and even at room temperature. These results suggest that ultrafine optoelectronic devices with quantum-size p-n junction are possible.

Keywords

Materials scienceEpitaxyFabricationQuantum wireOptoelectronicsCrystal (programming language)CapacitanceGallium arsenideElectrodeNanotechnologyChemistryQuantumPhysics

Affiliated Institutions

Hitachi (Japan) JP

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Publication Info

Year: 1992
Type: article
Volume: 60
Issue: 6
Pages: 745-747
Citations: 207
Access: Closed

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APA Style

                            
                                
                                    K. Haraguchi, 
                                
                                    T. Katsuyama, 
                                
                                    Kenji Hiruma
                                
                                et al.
                            
                            (1992). 
                            GaAs <i>p</i>-<i>n</i> junction formed in quantum wire crystals. 
                            Applied Physics Letters
                            , 60
                            (6)
                            , 745-747.
                            https://doi.org/10.1063/1.106556
                        

Identifiers

DOI: 10.1063/1.106556