Frequency dependence of surface cyclotron resonance in Si

Abstract

Cyclotron resonance on the (100) surface of Si is investigated at frequencies between 94 and 891 GHz. The cyclotron mass, especially its dependence on surface electron density, is found to be independent of frequency in our samples. An increase of the scattering rate with magnetic field is observed.

Keywords

Cyclotron resonanceCyclotronElectron cyclotron resonanceFourier transform ion cyclotron resonanceIon cyclotron resonanceScatteringAtomic physicsResonance (particle physics)Materials scienceElectronPhysicsMagnetic fieldNuclear magnetic resonanceMass spectrometryNuclear physicsOptics

Affiliated Institutions

Technical University of Munich DE

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Publication Info

Year: 1976
Type: article
Volume: 14
Issue: 6
Pages: 2494-2497
Citations: 40
Access: Closed

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APA Style

                            
                                
                                    G. Abstreiter, 
                                
                                    J. F. Koch, 
                                
                                    P. Goy
                                
                                et al.
                            
                            (1976). 
                            Frequency dependence of surface cyclotron resonance in Si. 
                            Physical review. B, Solid state
                            , 14
                            (6)
                            , 2494-2497.
                            https://doi.org/10.1103/physrevb.14.2494
                        

Identifiers

DOI: 10.1103/physrevb.14.2494