Keywords
HeterojunctionX-ray absorption spectroscopyCondensed matter physicsChemistryScatteringFermi gasElectronCharge carrierLayer (electronics)Electron mobilityShubnikov–de Haas effectConduction electronMaterials scienceAbsorption spectroscopyPhysicsOpticsQuantum oscillations
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Publication Info
- Year
- 1980
- Type
- article
- Volume
- 98
- Issue
- 1-3
- Pages
- 117-125
- Citations
- 24
- Access
- Closed
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Cite This
G. Abstreiter
(1980).
Electronic properties of the two-dimensional system at GaAs/AlxGa1−xAs interfaces.
Surface Science
, 98
(1-3)
, 117-125.
https://doi.org/10.1016/0039-6028(80)90481-1
Identifiers
- DOI
- 10.1016/0039-6028(80)90481-1