Abstract
We have developed a method for controllably and reproducibly growing self-limiting ultrathin oxides with excellent electrical properties in the range /spl sim/10-25 /spl Aring/ thick at temperatures ranging from 25 to 600/spl deg/C, respectively, using an ultraviolet ozone (UVO/sub 3/) oxidation process. The self-limiting thickness depends primarily on the substrate temperature, allowing ultrathin oxide growth with precision and reproducibility using this UVO/sub 3/ process. Oxides grown by this method are comparable in electrical quality to thermal oxides, with similar leakage current densities and breakdown fields E/sub BD/>10 MV/cm. Current-voltage (I-V) analysis shows oxide thickness uniformity to within 1% from center to edge of a 4-in wafer. Capacitance-voltage (C-V) characterization of /spl sim/25 /spl Aring/ oxides shows excellent saturation behaviour, with low midgap interface trap densities and no hysteresis or dispersion.
Keywords
Materials scienceOzoneUltravioletAtmospheric temperature rangeOxideAnalytical Chemistry (journal)WaferOptoelectronicsSaturation currentCapacitanceSaturation (graph theory)VoltageElectrical engineeringChemistryElectrode
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Publication Info
- Year
- 1999
- Type
- article
- Volume
- 20
- Issue
- 3
- Pages
- 132-134
- Citations
- 57
- Access
- Closed
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Cite This
G. D. Wilk,
B. Brar
(1999).
Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature.
IEEE Electron Device Letters
, 20
(3)
, 132-134.
https://doi.org/10.1109/55.748911
Identifiers
- DOI
- 10.1109/55.748911