Abstract
The results of an experimental study of the infrared absorption of the ${(\mathrm{CH})}_{x}$ system, lightly doped ( 0.1%) with acceptors and donors, are presented. Additional absorptions are observed near 1370 ${\mathrm{cm}}^{\ensuremath{-}1}$ (width \ensuremath{\sim} 50 ${\mathrm{cm}}^{\ensuremath{-}1}$) and 900 ${\mathrm{cm}}^{\ensuremath{-}1}$ (width \ensuremath{\sim} 400 ${\mathrm{cm}}^{\ensuremath{-}1}$) upon doping with iodine, As${\mathrm{F}}_{5}$, and sodium. The two additional absorption maxima appear to be general features of lightly doped ${(\mathrm{CH})}_{x}$ independent of specific dopant or of cis (trans) content. Measurements on stretch-oriented films demonstrate that these absorption maxima are polarized primarily along the polymer chains. The narrow mode at 1370 ${\mathrm{cm}}^{\ensuremath{-}1}$ is attributed to a molecular vibration made ir active by the doping. The broader absorption centered at 900 ${\mathrm{cm}}^{\ensuremath{-}1}$ is discussed in terms of quasi-one-dimensional donor and acceptor bound states along the ${(\mathrm{CH})}_{x}$ chain. We include an experimental determination of the room-temperature dielectric constant in undoped ${(\mathrm{CH})}_{x}$; ${\ensuremath{\epsilon}}_{\ensuremath{\parallel}}\ensuremath{\simeq}10\ensuremath{-}12$, with uncertainty arising from the incomplete orientation of the ${(\mathrm{CH})}_{x}$ films. The bound-state energy is thus consistent with a one-dimensional hydrogenic model in which the Coulomb potential along the chain is reduced by ${\ensuremath{\epsilon}}_{\ensuremath{\parallel}}$. Alternatively viewing semiconducting ${(\mathrm{CH})}_{x}$ as a Peierls distorted one-dimensional metal, we discuss localized domain-wall-like charged donor (acceptor) states induced by charge-transfer doping.
Keywords
Affiliated Institutions
Related Publications
Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>Heterojunctions
Resonance enhanced inelastic light scattering from a quasi-two-dimensional electron gas confined at the interface of abruptly doped $\mathrm{GaAs}/n\ensuremath{-}{\mathrm{Al}}_{...
Electronic structure and transport properties in the transparent amorphous oxide semiconductor<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mi/><mml:mi mathvariant="normal">CdO</mml:mi><mml:mi>⋅</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">GeO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
An amorphous $2\mathrm{CdO}\ensuremath{\cdot}{\mathrm{GeO}}_{2}$ thin film with a band gap of 3.4 eV can be converted from an insulator (conductivity $\ensuremath{\sim}{10}^{\en...
Local structures of III-V diluted magnetic semiconductors<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>studied using extended x-ray-absorption fine structure
Local structures around Mn in ${\mathrm{Ga}}_{1\ensuremath{-}x}{\mathrm{Mn}}_{x}\mathrm{As}$ ($x=0.005$ and 0.074) films have been studied using Mn $K$-edge extended x-ray-absor...
Resonant photoemission study of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Nd</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ce</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">CuO</mml:mi></mml:mrow><mml:mrow><mml:mn>4</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">y</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>: Nature of electronic states near the Fermi level
The electronic structures of single-crystal and ceramic samples of the electron-doped superconductor ${\mathrm{Nd}}_{2\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Ce}}_{\mathrm{...
Two-dimensional electrical transport in GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>multilayers at high magnetic fields
We have studied the magnetotransport properties of two-dimensional electrons in thin GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ multilayers with fields ...
Publication Info
- Year
- 1979
- Type
- article
- Volume
- 19
- Issue
- 8
- Pages
- 4140-4148
- Citations
- 318
- Access
- Closed
External Links
Social Impact
Social media, news, blog, policy document mentions
Citation Metrics
Cite This
Identifiers
- DOI
- 10.1103/physrevb.19.4140