D. C. Tsui

Resistance standard using quantization of the Hall resistance of GaAs-Al<i>x</i>Ga1−<i>x</i>As heterostructures

Quantization of the Hall resistance of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures is observed at 4.2 K and at magnetic fields as low as 4.2 T. This dem...

g-Factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions

Evidence for a Collective Ground State in Si Inversion Layers in the Extreme Quantum Limit

Infrared measurements of the cyclotron resonance in the two-dimensional electron gas reveal a remarkable line narrowing and shift if and only if the lowest Landau level is parti...

Two-dimensional electrical transport in GaAs-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>multilayers at high magnetic fields

We have studied the magnetotransport properties of two-dimensional electrons in thin GaAs-${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ multilayers with fields ...

Far infrared resonant magnetoabsorption in low density Si inversion layers

High field magnetoconductivity of Si inversion layers