By means of ion-beam-analysis techniques, the trapping of deuterium implanted into nickel preimplanted with helium was investigated in the temperature range 100–500 K. Following room-temperature helium implantations and deuterium implantations at ∼100 K, linear-ramp annealing (1–2 K/min) was carried out, while the deuterium concentration within the near-surface region (0–0.5 μm) was monitored by use of the nuclear reaction D(3He,α)1 H. The release curves were analyzed by solving a diffusion equation with the appropriate trapping terms. In addition to trapping by lattice defects, stronger helium-associated traps were found with a binding enthalpy of 0.55±0.05 eV relative to a solution site. We propose that the responsible entities are small helium bubbles observed in the implanted material by transmission electron microscopy.
Trapping of ion-implanted deuterium by lattice defects in nickel has been studied by ion-beam-analysis techniques in the temperature range between 30 and 380 K. The deuterium-de...
We describe the synthesis of ZnS-capped CdSe semiconductor nanocrystals using organometallic reagents by a two-step single-flask method. X-ray photoelectron spectroscopy, transm...
Square arrays of 20–35-nm-diam gold particles with 50-nm spacings were formed on thick sapphire substrates by electron beam lithography. After annealing at 125 °C the particles ...
We report herein on the synthesis of "layered-layered" integrated materials (, 0.5, and 0.7) using the self-combustion reaction in solutions containing metal nitrates and sucros...
Ball-milling for a sufficient period of time of lithium−manganese oxide spinels, prepared either by a sol−gel method or by solid-state reaction, gave cathode materials of a lith...
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