Abstract

Electronic properties of graphene (carbon) nanoribbons are studied and compared to those of carbon nanotubes. The nanoribbons are found to have qualitatively similar electron band structure which depends on chirality but with a significantly narrower band gap. The low- and high-field mobilities of the nanoribbons are evaluated and found to be higher than those of carbon nanotubes for the same unit cell but lower at matched band gap or carrier concentration. Due to the inverse relationship between mobility and band gap, it is concluded that graphene nanoribbons operated as field-effect transistors must have band gaps <0.5eV to achieve mobilities significantly higher than those of silicon and thus may be better suited for low power applications.

Keywords

Graphene nanoribbonsBand gapMaterials scienceGrapheneField-effect transistorCarbon nanotubeSiliconOptoelectronicsCondensed matter physicsElectronic band structureWide-bandgap semiconductorElectron mobilityTransistorNanotechnologyPhysicsVoltage

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Publication Info

Year
2006
Type
article
Volume
88
Issue
14
Citations
352
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B. Obradovic, R. Kotlyar, Frederik Ole Heinz et al. (2006). Analysis of graphene nanoribbons as a channel material for field-effect transistors. Applied Physics Letters , 88 (14) . https://doi.org/10.1063/1.2191420

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DOI
10.1063/1.2191420