A Graphene Field-Effect Device

Max C. Lemme; T. J. Echtermeyer; M. Baus; H. Kurz

doi:10.1109/led.2007.891668

Abstract

In this letter, a top-gated field effect device (FED) manufactured from\nmonolayer graphene is investigated. Except for graphene deposition, a\nconventional top-down CMOS-compatible process flow is applied. Carrier\nmobilities in graphene pseudo-MOS structures are compared to those obtained\nfrom top-gated Graphene-FEDs. The extracted values exceed the universal\nmobility of silicon and silicon-on-insulator MOSFETs.\n

Keywords

GrapheneMaterials scienceSiliconOptoelectronicsGraphene nanoribbonsElectron mobilityMonolayerSilicon on insulatorMOSFETField-effect transistorNanotechnologyCMOSVoltageTransistorElectrical engineering

Affiliated Institutions

RWTH Aachen University DE

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Publication Info

Year: 2007
Type: article
Volume: 28
Issue: 4
Pages: 282-284
Citations: 1051
Access: Closed

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APA Style

                            
                                
                                    Max C. Lemme, 
                                
                                    T. J. Echtermeyer, 
                                
                                    M. Baus
                                
                                et al.
                            
                            (2007). 
                            A Graphene Field-Effect Device. 
                            IEEE Electron Device Letters
                            , 28
                            (4)
                            , 282-284.
                            https://doi.org/10.1109/led.2007.891668
                        

Identifiers

DOI: 10.1109/led.2007.891668