Retardation of O diffusion through polycrystalline Pt by Be doping
A serious problem preventing the use of high dielectric oxide materials (e.g., barium-strontium-titanate) for capacitors as part of future dynamic random access memory is the ox...
Publications
1 shownFrequent Co-Authors
Researcher Info
- h-index
- 1
- Publications
- 1
- Citations
- 12
- Institution
- Motorola (United States)
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h-index
1
h-index: Number of publications with at least h citations each.