Publications
3 shownThe 2018 GaN power electronics roadmap
Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently fac...
Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type GaN by Mg doping followed by low-energy electron beam irradiation
This is a personal history of one of the Japanese researchers engaged in developing a method for growing GaN on a sapphire substrate, paving the way for the realization of smart...
Frequent Co-Authors
Researcher Info
- h-index
- 3
- Publications
- 3
- Citations
- 2,484
- Institution
- Nagoya University
External Links
Identifiers
- ORCID
- 0000-0002-7598-2593
Impact Metrics
h-index
3
h-index: Number of publications with at least h citations each.